Publications | Alan Hung

An example preprint / working paper

Sun, 07 Apr 2019 00:00:00 +0000

Create your slides in Markdown - click the Slides button to check out the example.

Supplementary notes can be added here, including code, math, and images.

An example journal article

Tue, 01 Sep 2015 00:00:00 +0000

Click the Cite button above to demo the feature to enable visitors to import publication metadata into their reference management software.

Create your slides in Markdown - click the Slides button to check out the example.

Supplementary notes can be added here, including code, math, and images.

The Impact of Uniaxial Strain on Low Frequency Noise of nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drain

Sat, 10 Jul 2010 00:00:00 +0000

Abstract

The impact of uni-axial strain from embedded SiGe in recessed S/D (e-SiGe) and Ge implanted S/D (i-SiGe) on effective mobility μ eff , gate leakage current, short channel effect (SCE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μ eff enhancement but lead to worse SCE and LFN. The i-SiGe can reduce SCE and LFN but suffers limited μ eff improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

Low frequency noise in nanoscale pMOSFETs with strain induced mobility enhancement and dynamic body biases

Fri, 17 Jul 2009 00:00:00 +0000

Abstract

Local strain effect on low frequency noise (LFN) of pMOSFETs with gate length down to 60 nm was investigated in this paper. Novel and interesting results were identified from the pMOSFETs adopting embedded SiGe (e-SiGe) in source/drain for uni-axial compressive stress. This local compressive strain can realize significant mobility enhancement and desired current boost in nanoscale pMOSFETs. However, the dramatic increase of LFN emerges as a penalty traded off with mobility enhancement. The escalated LFN may become a critical killer to analog and RF circuits. Forward body biases (FBB) can improve the effective mobility and reduce LFN attributed to reduced normal field. However, the benefit from FBB becomes insignificant in strained pMOSFETs with sub-100 nm gate length.

Flicker noise in nanoscale pMOSFETs with mobility enhancement engineering and dynamic body biases

Fri, 26 Jun 2009 00:00:00 +0000

Abstract

The uni-axial compressive strain from e-SiGe S/D combined with dynamic body biases effect on flicker noise of pMOSFETs is presented in this paper. This compressive strain contributes higher mobility but the worse flicker noise in terms of higher S ID /I D 2 becomes a potential killer to RF/analog circuits. Forward body biases (FBB) can reduce the flicker noise but the degraded body bias effect in strained pMOSFETs makes it not as efficient as the standard ones without strain. Hooge’s mobility fluctuation model is adopted to explain the uni-axial strain and dynamic body biases effect on flicker noise. The increase of Hooge parameter α H is identified the key factor responsible the degraded flicker noise in strained pMOSFETs.